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DISCRETE SEMICONDUCTORS
DATA SHEET
BU505; BU505D Silicon diffused power transistors
Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13
Philips Semiconductors
Product specification
Silicon diffused power transistors
DESCRIPTION High-voltage, high-speed switching NPN power transistor in a TO-220AB package. The BU505D has an integrated efficiency diode.
2
BU505; BU505D
2
APPLICATIONS * Horizontal deflection circuits of colour television receivers. PINNING PIN 1 2 3 DESCRIPTION base collector; connected to mounting base emitter
MBK106
1
MBB008
1
3
MBB077
3
123
a. BU505.
b. BU505D.
Fig.1 Simplified outline (TO-220AB) and symbols.
QUICK REFERENCE DATA SYMBOL VCESM VCEO VCEsat VF ICsat IC ICM Ptot tf PARAMETER collector-emitter peak voltage collector-emitter voltage collector-emitter saturation voltage diode forward voltage (BU505D) collector saturation current collector current (DC) collector current (peak value) total power dissipation fall time see Fig.3 see Fig.3 Tmb 25 C; see Fig.4 inductive load; see Fig.7 VBE = 0 open base IC = 2 A; IB = 900 mA IF = 2 A CONDITIONS - - - - - - - - 0.9 TYP. MAX. 1500 700 1 1.8 2 2.5 4 75 - V V V V A A A W s UNIT
THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 1.67 UNIT K/W
1997 Aug 13
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM VCEO ICsat IC ICM IB IBM Ptot Tstg Tj PARAMETER collector-emitter peak voltage collector-emitter voltage collector saturation current collector current (DC) collector current (peak value) base current (DC) base current (peak value) total power dissipation storage temperature junction temperature Tmb 25 C; see Fig.4 see Fig.3 see Fig.3 VBE = 0 open base CONDITIONS
BU505; BU505D
MIN. - - - - - - - - -65 -
MAX. 1500 700 2 2.5 4 2 4 75 +150 150
UNIT V V A A A A A W C C
handbook, full pagewidth
10
MGB859
Zth j-mb (K/W)
=1
1
0.75 0.50 0.33 0.20 0.10 0.05
10-1
0.02 0.01 0
10-2 10-2
10-1
1
10
tp (ms)
102
Fig.2 Transient thermal impedance.
1997 Aug 13
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VCEOsust VCEsat VBEsat VEBO VF ICES PARAMETER CONDITIONS - - - - - - - 6 - - MIN. 700
BU505; BU505D
TYP. - - - 6 - - - - 13 7 65
MAX. - 1 1.3 - 1.8 0.15 1 1 30 - -
UNIT V V V V V mA mA mA MHz pF
collector-emitter sustaining voltage see Figs 5 and 6 collector-emitter saturation voltage IC = 2 A; IB = 900 mA base-emitter saturation voltage emitter-base voltage diode forward voltage (BU505D) collector-emitter cut-off current IC = 2 A; IB = 900 mA IE = 10 mA; IC = 0 IF = 2 A VCE = VCESmax; VBE = 0; note 1 VCE = VCESmax; VBE = 0; Tj = 125 C; note 1
IEBO hFE fT Cc
emitter-base cut-off current DC current gain transition frequency collector capacitance
VEB = 5 V; IC = 0 VCE = 5 V; IC = 100 mA VCE = 5 V; IC = 100 mA; f = 5 MHz VCB = 10 V; IE = ie = 0; f = 1 MHz
Switching times in horizontal deflection circuit (see Fig.7) ts storage time ICM = 2 A; IB(end) = 900 mA; Vdr = -4 V LB = 10 H LB = 15 H LB = 25 H tf fall time ICM = 2 A; IB(end) = 900 mA; Vdr = -4 V LB = 10 H LB = 15 H LB = 25 H Note 1. Measured with a half-sinewave voltage (curve tracer). - - - 0.9 0.9 0.85 - - - s s s - - - 6.5 7.5 9.5 - - - s s s
1997 Aug 13
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505; BU505D
handbook, full pagewidth
102
MGB942
IC (A)
10 = 0.01
ICM max IC max
tp = 10 s (1) II 20 s 50 s 100 s 200 s I 500 s
1
10-1
(2) 2 ms 10 ms DC
10-2 10
102
103
VCE (V)
104
Tmb = 25 C. I - Region of permissible DC operation. II - Permissible extension for repetitive pulse operation. (1) Ptot max and Ptot peak max lines. (2) Second breakdown limits.
Fig.3 Forward bias SOAR.
1997 Aug 13
5
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505; BU505D
MGD283
120 handbook, halfpage Ptot max (%)
100 to 200
handbook, halfpage
+ 50 V L horizontal oscilloscope
80
40
6V 30 to 60 Hz 300
vertical 1
MGE252
0 0 50 100 Tmb (oC) 150
Fig.5 Fig.4 Power derating curve.
Test circuit for collector-emitter sustaining voltage.
handbook, halfpage
MBH382
ICsat 90%
iC I halfpage handbook,C (mA) 250 200 tf 100 iB ts
MGE239
10% time
IB (end) 0 VCE (V) min VCEOsust time
Fig.6
Oscilloscope display for collector-emitter sustaining voltage.
Fig.7 Switching time waveforms.
1997 Aug 13
6
Philips Semiconductors
Product specification
Silicon diffused power transistors
PACKAGE OUTLINE
BU505; BU505D
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E P
A A1 q
D1
D
L2(1)
L1 Q
L
b1
1
2
3
b c
e
e
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4.1 A1 1.39 1.27 b 0.9 0.7 b1 1.3 1.0 c 0.7 0.4 D 15.8 15.2 D1 6.4 5.9 E 10.3 9.7 e 2.54 L 15.0 13.5 L1 3.30 2.79 L2 max. 3.0
(1)
P 3.8 3.6
q 3.0 2.7
Q 2.6 2.2
Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC TO-220AB EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-11
1997 Aug 13
7
Philips Semiconductors
Product specification
Silicon diffused power transistors
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
BU505; BU505D
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Aug 13
8
Philips Semiconductors
Product specification
Silicon diffused power transistors
NOTES
BU505; BU505D
1997 Aug 13
9
Philips Semiconductors
Product specification
Silicon diffused power transistors
NOTES
BU505; BU505D
1997 Aug 13
10
Philips Semiconductors
Product specification
Silicon diffused power transistors
NOTES
BU505; BU505D
1997 Aug 13
11
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
137067/00/01/pp12
Date of release: 1997 Aug 13
Document order number:
9397 750 02708

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